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| MSC80186 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS .EMI .CLASS .COMMON .VSWR .f .NOI .P T TER BALLASTED A LINEAR OPERATION EMITTER CAPABILITY 15:1 @ RATED CONDITIONS t 3.2 GHz TYPICAL SE FIGURE 12.5 dB @ 2 GHz OUT = 30.0 dBm MIN. .230 4L STUD (S027) hermetically sealed ORDER CODE MSC80186 BRANDING 80186 PIN CONNECTION DESCRIPTION The MSC80185 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter PDISS IC VCE TJ TSTG Power Dissipation Device Bias Current (see Safe Area) -- 500 20 200 - 65 to +200 W mA V C C Collector-Emitter Bias Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 17 C/W *Applies only to rated RF amplifier operation October 1992 1/6 MSC80186 ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCEO ICEO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCE = 18V VCE = 5V IE = 0mA IC = 0mA IB = 0mA IC = mA 50 3.5 20 -- 15 -- -- -- -- -- -- -- -- 1.0 120 V V V mA -- Test Conditions Value Min. Typ. Max. Unit G P* GP* COB * Note: f = 2.0 GHz f = 2.0 GHz f = 1 MHz POUT = 30.0 dBm POUT = 30.0 dBm VCB = 28 V POUT = 10 dB 7.0 -- -- 9.0 -- -- -- 1 5.0 dB dB pF IC = 220mA VCE = 18V 2/6 MSC80186 TYPICAL PERFORMANCE TYPICAL POWER OUTPUT & GAIN @ 1dB COMPRESSION POINT vs FREQUENCY TYPICAL POWER OUTPUT & GAIN @ 1dB COMPRESSION POINT vs COLLECTOR CURRENT MAXIMUM OPERATING AREA FOR FORWARD BIAS OPERATION TYPICAL LINEAR GAIN vs COLLECTOR CURRENT 3/6 MSC80186 TYPICAL S-PARAMETERS VCE = 18 V IC = 220 mA Zg = 50 ohms 4/6 MSC80186 TEST CIRCUIT Ref.: Dwg. No. C127305 All dimensions are in inches. PACKAGE MECHANICAL DATA 5/6 MSC80186 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6 |
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